2N5913

2N5913
Silicon NPN Transistor
RF Power Output
P_O = 1.8W @ 175MHz



Description: The 2N5913 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment.
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Features:
Specified 12.5 Volt, 175MHz Characteristics:
    Output Power = 1.75 Watts
    Minimum Gain = 11.5dB
    Efficiency = 50%
Characterized through 225MHz

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2N5913Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: The 2N5913 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment.

2N5913
Silicon NPN Transistor
RF Power Output
P_O = 1.8W @ 175MHz

Description:
The 2N5913 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment.