Table of Contents
MOSFET Compact I-V Modeling for Deep-Submicron Technology
Development
Presentation Outline
Motivation and Perspective
Presentation Outline: Inverse Presentation: Results
Model Prediction Over Full Range of Ldrawn, Vgs,
Vds, Vbs
Threshold Voltage Prediction
Saturation Current Prediction
Leakage Current Prediction
“Quotations”
Presentation Outline: Compact Model Formulation
Macromodel View of a MOSFET: Definition of Parameters
Vertical Nonuniform Doping Transformation
Vt Model Formulation: Long-Channel, Nonuniform
Doping
Vt Model Behavior: Nch
Charge Sharing and Barrier Lowering
Vt Model Formulation: SCE (Vt Roll-Off) Due to
Charge Sharing
Vt Model Behavior: l, d — Charge Sharing
Vt Model Formulation: SCE (Vt Roll-Off) Due to
Barrier Lowering
Vt Model Behavior: a, j — Barrier Lowering
2-D Pile-up Charge for Reverse Short Channel Effect
(RSCE)
Vt Model Formulation: RSCE (Vt Roll-Up) and Leff
Model
Vt Model Behavior: k, b — Reverse Short-Channel
Effect
Ids Model Formulation: Vertical-Field Mobility
Modeling
Vertical-Field Effective Mobility
Ids Model Formulation: S/D Series Resistance Modeling
Ids Model Formulation: Velocity Saturation and
Parallel-Field Effective Mobility
Ids Model Formulation: Short-Channel Linear Ids
Model
Ids Model Formulation: Saturation Current and Saturation
Voltage
Ids Model Formulation: Effective Saturation Voltage
Ids Model Formulation: Channel-Length Modulation
and Velocity Overshoot
Ids Model Formulation: Effective Early Voltage
for CLM
CLM – Velocity Saturation/Overshoot Modeling: Calculated
Channel Field & Modeled Average Field
Ids Model Formulation: Subthreshold Current and
Effective Gate Overdrive
Ids Model Formulation: Modified Vgteff for Subshreshold
(Diffusion) Current
Subthreshold Current Modeling
Single-Piece Current Model: From Diffusion to Drift
Modeling the Edge-Leakage (Corner) Current in STI
Structure
Ids Model Formulation: Edge- and Diode-Leakage
Currents
Presentation Outline: Measurement: Definition and
Characterization
“Icrit@Vt0” Critical-Current at Linear-Threshold
Linear Ids-Vgs Measurement and Icrit@Vt0 Extraction
Vt0(Vbs,L?) @ Icrit Measurement
Vtsat(Vb0) @ Icrit and Idsat Measurement
Vt0(Vbb) @ Icrit Measurement
Vtsat(Vbb) @ Icrit Measurement
Presentation Outline: Model Parameter Extraction
Vt Parameter Extraction
Ids Parameter Extraction: Mobility, Bulk Charge,
Series Resistance
Ids Parameter Extraction: CLM, Subthreshold, Edge-Leakage
Current
Presentation Outline: Comparison with Measurement
& BSIM3v3
Vt Model Prediction: Linear Region (Vds = 0.05
V)
Vt Model Prediction: Saturation Region (Vds = 2.5
V)
Vt Model Prediction: Intermediate Vds = 1 V
Vt Model Prediction: DIBL
Bias-Dependent Output Characteristics
Length-Dependent Output Characteristics
Bias-Dependent Turn-on/Leakage Current Prediction
Length-Dependent Turn-on/Leakage Current Prediction
De-embedding Edge-Leakage Current from Main MOS
Current — Length Variations
De-embedding Edge-Leakage Current from Main MOS
Current — Body-Bias Variations
Channel-Length Modulation Modeling
Length- and Bias-Dependent Effective Average Field
and Early Voltage
Length-Dependent Effective Average Field and the
“Average” Velocity Overshoot
Length- and Bias-Dependent Effective Potential
Drop Across the VSR, Rsd, and the Intrinsic Channel
Process Fluctuation: Effect of Rsd on Drain Current
Transconductance/Current Ratio: Model Smoothness
Effective Mobility Roll-off
Error Definition and Comparison
Error Comparison with BSIM3v3
Presentation Outline: Empirical Process Correlation
Process Correlation: Threshold Voltage Prediction
Process Correlation: Saturation Current Prediction
Process Correlation: Leakage Current Prediction
Presentation Outline: Conclusions
Applications and Future Development
References |