MOSFET Compact I-V Modeling for Deep-Submicron Technology Development

13-Sep-99

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Table of Contents

MOSFET Compact I-V Modeling for Deep-Submicron Technology Development

Three Major Goals

“State-of-the-Art”

Measurement Data

Model Parameter Extraction

BSIM Model Parameter Extraction

Macromodel View of a MOSFET

“Icrit@Vt0” Critical-Current at Linear-Threshold

Linear Ids-Vgs Measurement and Icrit@Vt0 Extraction

Vt0(Vbs,L?) @ Icrit Measurement

Vtsat(Vb0) @ Icrit and Idsat Measurement

Vt0(Vbb) @ Icrit Measurement

Vtsat(Vbb) @ Icrit Measurement

Vt Parameter Extraction

Ids Parameter Extraction (1)

Ids Parameter Extraction (2)

Vt Model Prediction

Vt Model Process Correlation

Idsat Prediction: Vt-Implant Dose Correlation

Idsat Prediction: PT-Implant Energy Correlation

Ids-Vds: Output Characteristics

Ids-Vds: Output Characteristics

Ids-Vgs: Turn-on (linear) and Subthreshold (log) Characteristics

Ids-Vgs: Turn-on (linear) and Subthreshold (log) Characteristics

Error Definition and Comparison

Error Comparison with BSIM3v3

Outlook

References

Author: Zhou Xing

Email: exzhou@ntu.edu.sg

Home Page: http://www.ntu.edu.sg/home/exzhou/Research/DOUST/intro.htm