Table of Contents
MOSFET Compact I-V Modeling for Deep-Submicron Technology
Development
Three Major Goals
“State-of-the-Art”
Measurement Data
Model Parameter Extraction
BSIM Model Parameter Extraction
Macromodel View of a MOSFET
“Icrit@Vt0” Critical-Current at Linear-Threshold
Linear Ids-Vgs Measurement and Icrit@Vt0 Extraction
Vt0(Vbs,L?) @ Icrit Measurement
Vtsat(Vb0) @ Icrit and Idsat Measurement
Vt0(Vbb) @ Icrit Measurement
Vtsat(Vbb) @ Icrit Measurement
Vt Parameter Extraction
Ids Parameter Extraction (1)
Ids Parameter Extraction (2)
Vt Model Prediction
Vt Model Process Correlation
Idsat Prediction: Vt-Implant Dose Correlation
Idsat Prediction: PT-Implant Energy Correlation
Ids-Vds: Output Characteristics
Ids-Vds: Output Characteristics
Ids-Vgs: Turn-on (linear) and Subthreshold (log)
Characteristics
Ids-Vgs: Turn-on (linear) and Subthreshold (log)
Characteristics
Error Definition and Comparison
Error Comparison with BSIM3v3
Outlook
References |
Author: Zhou Xing
Email: exzhou@ntu.edu.sg
Home Page: http://www.ntu.edu.sg/home/exzhou/Research/DOUST/intro.htm |