Table of Contents
Exploring the Novel Characteristics of Hetero-Material
Gate Field-Effect Transistors (HMGFET’s) with Gate Material Engineering
Presentation Outline
Background, Motivation, and Objectives
Structure of the HMGFET
Two Conceptual Processes to Realize the Proposed
HMGFET
Computer Experiements
Numerical Models and Parameters
Simulated HMGFET Structure and Mesh
Linear Threshold vs. Gate or Channel Length for
Different (Fixed) Values of S-Gate Length
DIBL Voltage vs. Gate or Channel Length for Different
(Fixed) Values of S-Gate Length
Off-State Current vs. Gate or Channel Length for
Different (Fixed) Values of S-Gate Length
Saturation Current vs. Gate or Channel Length for
Different (Fixed) Values of S-Gate Length
On/Off Current Ratio vs. Gate or Channel Length
for Different (Fixed) Values of S-Gate Length
Off-State Current vs. Saturation Current for Different
(Fixed) Values of S-Gate Length
Threshold and DIBL Voltage vs. S-Gate Length At
a Fixed Channel Length (Variable Lg/Ls Ratio)
Saturation and Leakage Current vs. S-Gate Length
At a Fixed Channel Length (Variable Lg/Ls Ratio)
Transconductance, Drain Conductance, and Voltage
Gain vs. S-Gate Length At a Fixed Channel Length (Variable Lg/Ls Ratio)
Threshold and DIBL Voltage vs. Channel Length At
a Fixed (Optimum) Lg/Ls Ratio
I–V Characteristics for the HMGFET’s With Lc=0.25m
and Ls=80nm, And With the Same Channel Doping Or Same Threshold As That
of the SMGFET
Performance Improvement for the HMGFET’s With Lc=0.25m
and Ls=80nm, And With the Same Channel Doping Or Same Threshold As That
of the SMGFET
Ids–Vgs and gm–Vgs Characteristics for Different
S-Gate Workfunctions At a Fixed Lc=0.25mm, Ls=80nm (HMGFET: Nch=1.18x1017
cm–3, SMGFET: Nch=4x1017 cm–3)
Threshold and DIBL Voltage vs. Workfunction Difference
At a Fixed Lc=0.25mm and Ls=80nm
Saturation and Leakage Current vs. Workfunction
Difference At a Fixed Lc=0.25mm and Ls=80nm
Transconductance, Drain Conductance, and Voltage
Gain vs. Workfunction Difference At a Fixed Lc=0.25mm and Ls=80nm
Field Profiles (Off and On States) for the HMGFET’s
(Lc=0.25mm and Ls=80nm) With the Same Channel Doping Or Same Threshold
As That of the SMGFET
Velocity Profiles (Off and On States) for the HMGFET’s
(Lc=0.25mm and Ls=80nm) With the Same Channel Doping Or Same Threshold
As That of the SMGFET
Threshold and DIBL Voltage vs. Gate or Channel
Length for the HMGFET With the Same Vt0=0.422V (@Lc=0.25mm) As That of
the SMGFET
Transconductance, Drain Conductance, and Voltage
Gain vs. Gate or Channel Length for the HMGFET (Vt0=0.422V @Lc=0.25mm)
As That of the SMGFET
On/Off Current Ratio vs. Gate Length for the HMGFET
With the Same Vt0=0.422V (@Lc=0.25mm) As That of the SMGFET
The Ultimate Performance Comparison: Will HMGFET
Beat SMGFET for the Same Technology Node? And Beyond ...?
Discussions
Summary and Conclusions |
Author: Xing
Zhou
Email: exzhou@ntu.edu.sg
Home Page: http://www.ntu.edu.sg/home/exzhou/Research/Project.htm#H |