Table of Contents
A Novel Approach to Compact I-V Modeling for Deep-Submicron
MOSFET’s Technology Development and Circuit Simulation
Outline of Presentation and Approach
Summary of Model Formulation
Macromodel View of a MOSFET: Definition of Parameters
Vertical Nonuniform Doping Transformation
Charge Sharing and Barrier Lowering
2-D Pile-up Charge for Reverse Short Channel Effect
(RSCE)
Ids Model Formulation: Vertical-Field Mobility
Modeling
Ids Model Formulation: S/D Series Resistance Modeling
CLM – Velocity Saturation/Overshoot Modeling: Calculated
Channel Field & Modeled Average Field
Subthreshold Current Modeling
De-embedding the Edge-Leakage (Coner) Current in
STI Structure
Vt Parameter Extraction
Ids Parameter Extraction: Mobility, Bulk Charge,
Series Resistance
Ids Parameter Extraction: CLM, Subthreshold, Edge-Leakage
Current
Length-Dependent Output Characteristics
Length-Dependent Turn-on/Leakage Current Prediction
Saturation Current Prediction
Leakage Current Prediction
Conclusions |
Author: X. Zhou
Email: exzhou@ntu.edu.sg
Home Page: http://www.ntu.edu.sg/home/exzhou/Research/DOUST/intro.htm |