Table of Contents
A Predictive Length-Dependent Saturation Current Model
Based on Accurate Threshold Voltage Modeling
Presentation Outline
Modeling the Short-Channel Effects
The MOSFET’s Macromodel View
Vth Model Formulation: Nonuniform Doping and Charge
Sharing
Vth Model Formulation: SCE Due to Barrier Lowering
Vth Model Formulation: RSCE Due to Boron Pileup
and Body Effect
Vth Parameter Extraction
Vth Model Behavior
Vth Model Prediction
Experimental Correlation
Vth Model Process Correlation
Saturation-Current Modeling
Idsat Parameter Extraction and Prediction
Idsat Prediction: Substrate-Bias Dependence
Idsat Prediction: Vth-Implant Dose Correlation
Idsat Prediction: PT-Implant Energy Correlation
Conclusions |
Author: Xing
Zhou
Email: exzhou@ntu.edu.sg
Home Page: http://www.ntu.edu.sg/home/exzhou/Research/DOUST/intro.htm |