Report by: C.P. Ravikumar
A seminar on High Frequency Characterization of Transistors was held on 29-Jul-2010 under the auspices of the VLSI Society of India, the IEEE Circuits and Systems Bangalore Chapter, and Texas Instruments Technical University (PragaTI). The speaker was Dr. Jayasimha Prasad from DSM, USA. The venue was Texas Instruments, Bagmane Tech Park, CV Raman Nagar, Bangalore.
Dr. C.P. Ravikumar introduced the speaker and welcomed the audience on behalf of VSI, IEEE CAS, and Texas Instruments.
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Dr. Prasad, who has extensive experience in the field of characterization, gave an excellent tutorial overview on the characterization of transistor parameters. He addressed the characterization of both BJT and MOS transistors during his talk. His talk covered all the important results published in the area since the 1950s. Starting with fundamentals of S-parameters and Smith Charts, Dr. Prasad went on to describe practical aspects of measurement of the S-parameters.
Dr. Ravikumar thanked the speaker for spending his valuable time in educating the participants through his illuminating lecture. About 20 participants attended the seminar. Refreshments were served at the end of the event. Dr. Prasad also interacted with the attendees after the seminar and clarified their doubts.
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