Presentation Outline: Inverse Presentation: Results
- Available measurement data
- A set of manually-measured terminal I-V (total of 200) from the same die of a 0.25-?m CMOS shallow-trench isolation (STI) test wafer (#15), with drawn gate lengths Ldrawn = 10, 3, 1, 0.8, 0.5, 0.34, 0.26, 0.24, 0.22, 0.2 ?m.
- A set of automatically-measured Vt, Idsat, and Ioff data from the same process of a split-lot with Vt-adjustment implant doses F = 0, 1, 2.5, 4?1012 cm-2.
- Developed compact model
- Same form as the long-channel one (~100 lines of code).
- One-piece, four inputs (full range): Ldrawn, Vgs, Vds, Vbs.
- Correlation to process variables: F as input.
- Model parameters and extraction
- Total of 23 process-dependent fitting parameters.
- One-iteration, 11-step extraction.
- Requires 13 I-V sweeps and 42 point (I, V) data.
Ids = f(Ldrawn, Vgs, Vds, Vbs)