Presentation Outline: Compact Model Formulation
Essence of compact terminal I-V modeling — describe an essentially 3-D device by a 1-D formulation through “effective” electrical quantities
Trends — technology, rather than single-transistor, characterization (“reality”)
- Physical quantities (CD, tox, xj, Nsd, S, ...) are strongly subject to process fluctuations.
- Short-channel effect (SCE) is a gradual effect as the gate length alone is decreased.
Modeling short-channel effects (“mental image”)
- Electrical parameters: Leff, Neff, Vt, Rsd, meff, Eeff, VAeff, ...
- Sequence: 1st-order (Ion), 2nd-order (Isub), 3rd-order (Iedge).
- Tradeoff: detailed physics vs. efficiency/compactness.
Effective transformation — a step-by-step process of building in individual SCE’s to the well-known long-channel models