Transconductance, Drain Conductance, and Voltage Gain vs. S-Gate Length At a Fixed Channel Length (Variable Lg/Ls Ratio)
- Comments
- A unique feature of the HMGFET due to the potential step along the channel.
- Feature not achievable with conventional doping engineering.
- Observations
- Simultaneous gm enhancement and gd reduction is achievable with HMGFET.
- An increased voltage gain is expected.