Threshold and DIBL Voltage vs. Workfunction Difference At a Fixed Lc=0.25mm and Ls=80nm

• Comments
  • Short-channel effect (DIBL) can be minimized by engineering the S-gate material.
  • Many options to explore: W-polycide, W/TiN, poly-(Si,Ge).

• Observations
  • Threshold voltage increases at increasing S-gate workfunction at fixed Wc (increasing DWsg).
  • A minimum DIBL occurs at DWsg = 0.46 eV (W/poly-Si).

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