“Effective” Modeling of Velocity Overshoot and Potential Drops from Terminal Current
Physical interpretation of “average” velocity
- Physical interpretation of “effective” potential drops
- Across Rsd
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- Across the VSR
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- Across the “linear” channel
A compact MOSFET model that
includes physics-based description
of device internal operations with a
one-region semi-empirical formulation
determined from terminal I-V data
Eav ? “effective average field”
across the intrinsic channel