Conclusions
A compact Ids model for CLM in deep-submicron MOSFET’s
- Simple one-region equation, same form as the well-known one.
- One parameter extraction from one set of Idsat-Ldrawn data.
- Full length- and bias-dependencies (through the effective Early voltage).
Velocity-overshoot modeling from terminal I-V data
- In principle, velocity overshoot should be modeled microscopically by “local” overshoot velocities (using, e.g., Monte Carlo);
- which has been modeled macroscopically by the quasi-2D solution of the electric field in the VSR;
- and further effectively reduced to an “average field” and “equivalent potential” in the simplified compact model.
Application
- The model has been verified with experimental data of a 0.25-mm CMOS data.
- The complete unified model can be used for aiding deep-submicron technology development as well as device optimization and circuit design.