Outline of Presentation and Approach
Motivation and objective — a compact model for technology developers; a circuit model with process-variable input
Summary of compact model formulation
- Trends — technology, rather than single-transistor, characterization (“reality”)
- Physical quantities (CD, tox, xj, Nsd, S, ...) are strongly subject to process fluctuations.
- Short-channel effect (SCE) is a gradual effect as the gate length alone is decreased.
- Modeling — sequence of modeling and parameter extraction (“mental image”)
- Electrical parameters: Leff, Neff, Vt, Rsd, meff, Eeff, VAeff, ...
- Sequence: 1st-order (Ion), 2nd-order (Isub), 3rd-order (Iedge).
- Tradeoff: detailed physics vs. efficiency/compactness.
- Approach — effective transformation — a step-by-step process of building in individual SCE’s to the well-known long-channel models
Result: one-piece equation, 23 fitting parameters, one-iteration extraction
- Model prediction — full length and bias range (in comparison with BSIM3v3)
- Process correlation — prediction of split-wafer data with implant dose as input
Conclusion, applications, and potential impact