Presentation Outline
Objective ? Develop a general approach to formulating compact models for prediction of deep-submicron MOSFET’s characteristics to aid new technology development
- Assumption ? Assuming that a high-level model should be derived from and be able to model low-level device physics, while empirical fitting is inevitable for correlation to experimental data
- Approach ? Using a combined 2D numerical simulation, empirical formulation, and experimental correlation approach to obtaining the target–variable optimization through interpolation