Major Objectives
Construct a framework for the TCAD approach to new technology development and transistor design and optimization.
Calibrate process and device simulators based on an existing process (0.25 µm) so that the developed models can be used in new processes (0.18 µm), which are to be verified with experimental devices.
Determine process windows for the given device performance targets through Design of Experiments (DOE) to bracket the final optimal design.
Formulate simplified analytic/empirical equations based on the full TCAD simulation to give a first-order approximation on the device performance in relation to process variables.
Extract circuit parameters from “virtual wafer” experiments, from which a complete TCAD environment will be established.
Investigate specific process and device phenomena through advanced physical modeling and simulation.
Provide a training ground for professional scientists and engineers in semiconductor processes and devices.