Date	Title	Venue
Dec. 15, 1997	Multi-Level TCAD Synthesis Approach to the Design and Optimization of Ultra-Small Transistors	AMD, Sunnyvale, CA, USA
Feb. 11, 1998	The Virtual Wafer Fab Technology for the Deep-Submicron ULSI Era	EEE, NTU, Singapore
Apr. 21, 1999	A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling	MSM99, San Juan, Puerto Rico, USA
Sep. 2, 1999	Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate Material Engineering	EEE, NTU, Singapore
Sep. 13, 1999	MOSFET Compact I-V Modeling for Deep-Submicron Technology Development	EEE, NTU, Singapore
Dec. 2, 1999	A Compact Ids Model for Channel-Length Modulation Including Velocity Overshoot	ISDRS-99, Charlottesville, VA, USA
Mar. 29, 2000	A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development with Process Correlation	MSM2000, San Diego, CA, USA
Sep. 6, 2000	MOSFET Compact I-V Modeling for Deep-Submicron Technology Development	IME, Tsinghua Univ., Beijing, PRC
Dec. 9, 2000	MOSFET Compact I-V Modeling for Deep-Submicron Technology Development	IIT, Bombay, India
Dec. 10, 2000	Mixed-Signal Multi-Level Circuit Simulation: An Implicit Mixed-Mode Solution	IIT, Bombay, India
Mar. 16, 2001	Hetero-Material Gate Field-Effect Transistors (HMGFET's)	Bluetooth Symposium, Santa Clara, CA, USA
Mar. 19, 2001	Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET's	MSM2001, Hilton Head Island, SC, USA
Mar. 20, 2001	Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET's	MSM2001, Hilton Head Island, SC, USA
Oct. 18, 2001	MOSFET Compact I-V Modeling for Deep-Submicron Technology Development	Fudan University, Shanghai, PRC
Oct. 23, 2001	Technology-Dependent Modeling of Deep-Submicron MOSFET's and ULSI Circuits	ICSICT2001, Shanghai, PRC
Apr. 24, 2002	Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers	WCM-MSM2002, San Juan, Puerto Rico, USA
June 20, 2002	Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits	MIXDES2002, Wroclaw, Poland
June 21, 2002	Mixed-Signal Multi-Level Circuit Simulation: An Implicit Mixed-Mode Solution	MIXDES2002, Wroclaw, Poland
Dec. 13, 2002	Multi-Level Modeling of Deep-Submicron CMOS ULSI Systems	IME, Tsinghua Univ. and Microelectronics R&D Center, CAS, Beijing, PRC
Jan. 21, 2003	MOSFET Compact I-V Modeling for Deep-Submicron Technology Development	Research Center for Nanodevices and Systems, Hiroshima University, Japan
Jan. 28, 2003	Mixed-Signal Multi-Level Circuit Simulation: An Implicit Mixed-Mode Solution	Research Center for Nanodevices and Systems, Hiroshima University, Japan
Feb. 25, 2003	A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization	WCM-MSM2003, San Francisco, CA, USA
Oct. 15, 2003	The Missing Link to Seamless Simulation	WIMNACT-Singapore, Singapore
Mar. 28, 2000	Modeling of Threshold Voltage with Reverse Short Channel Effect (by K. Y. Lim)	MSM2000, San Diego, CA, USA
Dec. 29, 2000	Surface-Potential-Based Model of Reverse Short Channel Effect in Submicrometer MOSFETs with Nonuniform Lateral Channel Doping (by Y. Wang)	ISMA2000, Singapore
Dec. 30, 2000	Investigation of reverse short channel effect with numerical and compact models (by Y. Wang)	ISMA2000, Singapore
Apr. 25, 2002	Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction (by S. B. Chiah)	WCM-MSM2002, San Juan, Puerto Rico, USA
Apr. 25, 2002	Compact Model for Manufacturing Design and Fluctuation Study (by K. Y. Lim)	WCM-MSM2002, San Juan, Puerto Rico, USA
Feb. 26, 2003	Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects (by S. B. Chiah)	WCM-MSM2003, San Francisco, CA, USA
Feb. 26, 2003	Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs (by S. B. Chiah)	WCM-MSM2003, San Francisco, CA, USA

Last Update: October 18, 2003