Modeling the Edge-Leakage (Corner) Current in STI Structure

Iedge = Imos(We0, Vv0Vt)

Physical (derived) parameters
Imos - MOS channel current

Iedge - edge-leakage current
Idiode - diode-leakage current

Process (fitting) parameters
Vv0 - scaled threshold voltage

We0 - effective width of Iedge
Is0 - diode leakage

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