Ids Model Formulation: Edge- and Diode-Leakage Currents

• MOS Ids model

• Diode-leakage current

• Final unified one-region Ids model

Fitting parameters: We0, Vv0

Fitting parameter: Is0

• Edge-leakage current (in STI structure) ? based on the full Imos equation with a fitted width (We0) and a scaled threshold voltage (Vv0)

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