References
[1] K. Y. Lim, X. Zhou, D. Lim, Y. Zu, H. M. Ho, K. Loiko, C. K. Lau, M. S. Tse, and S. C. Choo, “A Predictive Semi-Analytical Threshold Voltage Model for Deep-Submicrometer MOSFET’s,” Proc. 1998 IEEE Hong Kong Electron Devices Meeting, Hong Kong, Aug. 1998, pp. 114–117.
[2] K. Y. Lim and X. Zhou, “Modeling of Threshold Voltage with Non-uniform Substrate Doping,” Proc. 1998 IEEE International Conference on Semiconductor Electronics (ICSE’98), Malaysia, Nov. 1998, pp. 27–31.
[3] X. Zhou, K. Y. Lim, and D. Lim, “A Simple and Unambiguous Definition of Threshold Voltage and Its Implications in Deep-Submicron MOS Device Modeling,” IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 807–809, 1999.
[4] K. Y. Lim, X. Zhou, and D. Lim, “A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling,” Proc. 2nd Modeling and Simulation of Microsystems (MSM99), San Juan, Puerto Rico, Apr. 19–21, 1999, pp. 423–426.
[5] X. Zhou, K. Y. Lim, and D. Lim, “A New ‘Critical-Current at Linear-Threshold’ Method for Direct Extraction of Deep-Submicron MOSFET Effective Channel Length,” IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1492–1494, 1999.
[6] X. Zhou and K. Y. Lim, “A Compact MOSFET Ids Model for Channel-Length Modulation Including Velocity Overshoot,” Proc. 1999 International Semiconductor Device Research Symposium (ISDRS-99), Charlottesville, VA, Dec. 1–3, 1999, pp. 423–426.
[7] X. Zhou, K. Y. Lim, and D. Lim, “A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology Development,” IEEE Trans. Electron Devices, vol. 47, no. 1, pp. 214–221, 2000.
[8] X. Zhou and K. Y. Lim, “A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development with Process Correlation,” Proc. the 3rd Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, Mar. 27–29, 2000, pp. 333–336.
[9] K. Y. Lim, X. Zhou, and Y. Wang, “Modeling of Threshold Voltage with Reverse Short Channel Effect,” Proc. the 3rd Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, Mar. 27–29, 2000, pp. 317–320.
[10] K. Y. Lim and X. Zhou, “A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V Modeling,” IEEE Trans. Electron Devices, vol. 47, no. 6, pp. 1300–1302.
[11] K. Y. Lim and X. Zhou, “A Physically-Based Semi-Empirical Effective Mobility Model for MOSFET Compact I-V Modeling,” to appear in Solid-State Electron.
[12] X. Zhou and K. Y. Lim, “Unified MOSFET Compact I-V Model Formulation Through Physics-Based Effective Transformation,” to appear in IEEE Trans. Electron Devices.
[13] X. Zhou and K. Y. Lim, “Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s,” to appear in Proc. the MSM2001, Hilton Head Island, SC, Mar. 19–21, 2001.
[14] S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, “Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s,” to appear in Proc. the MSM2001, Hilton Head Island, SC, Mar. 19–21, 2001.
[15] X. Zhou, K. Y. Lim, and W. Qian, “Threshold Voltage Definition and Extraction for Deep-Submicron MOSFET’s,” accepted for publication in Solid-State Electron.
[16] K. Y. Lim and X. Zhou, “A New Interpretation of MOSFET Effective Mobility Roll-Off in Moderate Inversion,” submitted for publication.