Background, Motivation, and Objectives
Background
- Split-gate FET: M. Shur, Appl. Phys. Lett. 54, 162 (1989); K. Ismail, et al., IEEE Electron Device Lett. 11, 469 (1990).
- Dual-gate FET: P. Dollfus and P. Hesto, Solid-State Electron. 36, 711 (1993).
- DMGFET: W. Long and K. K. Chin, IEDM Tech. Dig., 549 (1997).
Motivation ? to explore the novel characteristics of the DMGFET structure for possible realization in the current MOS ULSI technology
Objectives
- To propose compatible processes to realize the HMGFET for possible integration with the current MOS technology.
- To investigate the unique features of the HMGFET in comparison with the conventional SMGFET.
- To uncover the potential benefits the HMGFET could offer for breaking the barrier in MOS scaling limit.
- To inspire incentive for experimental exploration on new ways of engineering deep-submicron transistors.