Structure of the HMGFET
Gate ? two materials in contact, with different workfunctions
- Poly-gate of length Lg and workfunction Wg defined by the technology node.
- Source-gate (“S-gate”) of length Ls and workfunction Ws > Wg, assuming to be formed by a self-aligned “asymmetric spacer process.”
Engineering ? the location and magnitude of the potential step at the hetero-material interface by different “spacer” thickness and material
- Terminology
- Gate Length (technology): Lg
- Channel Length (device): Lc
HMGFET: Lc = Lg + Ls, SMGFET: Lc = Lg
- Scenarios for comparison
- Technology (Lg) ? device I-V (Lc)
- Design parameters
- Lg/Ls ratio at fixed Lc
- Workfunction difference Ws – Wg
- Channel doping Nch