Numerical Models and Parameters

• Simulator ? MEDICI

  • Mobility models: concentration-dependent, perpendicular- and parallel-field.

• Device structure

  • Gate oxide: tox = 50 Å
  • Substrate doping: Nsub = 2?1017 cm–3
  • Channel doping: Nch = 4?1017 cm–3
  • LDD junction depth: xj = 70 nm
  • S/D junction depth: xjSD = 150 nm
  • Oxide spacer thickness: tsp = 120 nm
  • Fixed oxide charge: Nss = 3?1010 cm–2
  • Gate workfunction: Wg = 4.17 eV
  • S-Gate workfunction: Ws = 4.63 eV
  • Channel, LDD, S/D are all Gaussian.

The focus is on qualitative and

relative comparisons.

• Variables
  • Gate length Lg
  • S-gate length Ls
  • S-gate workfunction Ws

• Device parameters
  • Linear threshold voltage:
    Slope method at maximum gm
    
  • Saturation threshold voltage:
    Constant-current at Ids when Vgs=Vt0
    
  • Saturation current:
    Ion = Ids (Vgs = Vds = 3 V)
    
  • Off-state current:
    Ioff = Ids (Vgs = 0, Vds = 3 V)
    

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