Computer Experiements
1st ? Investigate the scaling characteristics with fixed S-gate length
- For each fixed value of Ls = 50, 60, 70, 80, 90, 100 nm, vary gate length Lg.
- Extract Vtlin, Vtsat, Ion, and Ioff to compare with those of SMGFET.
- Other fixed parameters: Nch = 4?1017 cm–3, Wg = 4.17 eV, Ws = 4.63 eV.
2nd ? Investigate the effect of Lg/Ls ratio at a fixed Lc
- At a fixed Lc = Lg + Ls = 0.25 mm, vary Lg/Ls ratio.
- Extract Vt, Ion, Ioff, gm, gd, and gm/gd to compare with SMGFET (Lc = 0.25 mm).
- Other fixed parameters: Nch = 4?1017 cm–3, Wg = 4.17 eV, Ws = 4.63 eV.
3rd ? Investigate the effect of workfunction difference at a fixed Lc
- At a fixed Lc = 0.25 mm and Wg = 4.2 eV, vary S-gate workfunction Ws.
- Extract Vt, Ion, Ioff, gm, gd, and gm/gd to compare with SMGFET (Lc = 0.25 mm).
- SMGFET: Nch = 4?1017, HMGFET: Nch = 1.18?1017 cm–3 to get Vt0 = 0.422 V.
4th ? Compare an “optimum” HMGFET with the SMGFET
- Fix Ls = 80 nm, Ws = 4.66 eV, Nch = 1.18?1017 cm–3, vary gate length Lg.
- Compare the performance (Ion/Ioff, gm/gd) for technology (Lg) or device (Lc).