I–V Characteristics for the HMGFET’s With Lc=0.25m and Ls=80nm, And With the Same Channel Doping Or Same Threshold As That of the SMGFET

• Comments
  • Increased Vt (due to larger Ws) gives HMGFET more design freedom on channel doping.
  • Reduced channel-length modulation is a unique feature.

• Observations
  • When the channel doping Nch is reduced to get the same Vt as the SMGFET, gm is increased (50% or 17%), Ion is increased (22%), and gd is reduced (22%).

Gate Ids–Vgs Characteristics

Drain Ids–Vds Characteristics

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