Performance Improvement for the HMGFET’s With Lc=0.25m and Ls=80nm, And With the Same Channel Doping Or Same Threshold As That of the SMGFET

Nch: 4x1017 cm–3 4x1017 cm–3 1.18x1017 cm–3

Vt0: 0.422 V 0.531 V 0.422 V

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