Transconductance, Drain Conductance, and Voltage Gain vs. Workfunction Difference At a Fixed Lc=0.25mm and Ls=80nm

• Comments
  • Another unique feature of the HMGFET due to the potential step at the HMG interface.
  • A larger potential step favors voltage gain.

• Observations
  • Simultaneous gm enhancement and gd reduction is achievable at increasing DWsg.
  • An increased voltage gain is expected for the HMGFET.

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