Field Profiles (Off and On States) for the HMGFET’s (Lc=0.25mm and Ls=80nm) With the Same Channel Doping Or Same Threshold As That of the SMGFET
Observations
- An electric-field discontinuity occurs at the HMG interface, which causes field redistribution that tends to “flatten” the field profile along the channel.
- Field variation due to change in Vds is minimized (“screening” effect).
- Reduced channel doping (Nch) causes overall reduction of channel field, which enhances (high-field) mobility.
Comments
- Optimum performance (Ion/Ioff) can be tuned by “engineering” the field profile (Lg/Ls and DWsg).