Velocity Profiles (Off and On States) for the HMGFET’s (Lc=0.25mm and Ls=80nm) With the Same Channel Doping Or Same Threshold As That of the SMGFET
Observations
- Overall channel electron velocity is increased for HMGFET’s due to the channel field profile.
- Increased velocity at source side and decreased velocity at drain side favor transport efficiency and hot-electron suppression.
- Increased velocity at reduced channel doping is a result of the high-field mobility enhancement.
Comments
- The velocity distribution along the channel explains the enhanced transport efficiency and suppression of SCE achieved in HMGFET’s.