Threshold and DIBL Voltage vs. Gate or Channel Length for the HMGFET With the Same Vt0=0.422V (@Lc=0.25mm) As That of the SMGFET
Investigation
- The scaling characteristics of an “optimum” HMGFET (Lg/Ls = 2 and DWsg = 0.46 eV) is compared with a SMGFET with the same Vt0.
Observations
- Vt roll-off can be extended to much smaller Lg.
- DIBL effect is much reduced for the same technology node (Lg), or even for the same device (Lc).
Comments
- Significant improvements if a W-spacer could be added.