Transconductance, Drain Conductance, and Voltage Gain vs. Gate or Channel Length for the HMGFET (Vt0=0.422V @Lc=0.25mm) As That of the SMGFET
Investigation
- The gm, gd, and voltage gain of the “optimum” HMGFET compared with the SMGFET.
Observations
- At small gate lengths, the much reduced gd (due to reduced channel-length modulation) gives increased voltage gain, even with sacrifice gm in at the same Lg.
- At comparable Lc, both gm and gd for the HMGFET improve over those of the SMGFET.
Comments
- Unique feature of HMGFET.