Transconductance, Drain Conductance, and Voltage Gain vs. Gate or Channel Length for the HMGFET (Vt0=0.422V @Lc=0.25mm) As That of the SMGFET

• Investigation

  • The gm, gd, and voltage gain of the “optimum” HMGFET compared with the SMGFET.

• Observations

  • At small gate lengths, the much reduced gd (due to reduced channel-length modulation) gives increased voltage gain, even with sacrifice gm in at the same Lg.
  • At comparable Lc, both gm and gd for the HMGFET improve over those of the SMGFET.

• Comments

  • Unique feature of HMGFET.

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