Summary and Conclusions
Unique features of the HMGFET
- Tunable/controllable threshold voltage by the S-gate material and thickness.
- Extended threshold voltage roll-off due to compensation.
- Simultaneous transconductance enhancement and drain conductance reduction, as well as optimum DIBL reduction.
Potential benefits
- Controllable threshold voltage at affordable scaling.
- More design freedom to scale the device beyond what is achievable with conventional scaling rules.
Potential impact
- New ways of engineering/optimizing the performance of ultra-small transistors.
- Potential in breaking the barrier of conventional MOS scaling limit.
Yet another “brilliant” but unachievable idea,
or an inspiration/guide to experimental realization?