Discussions
Technology feasibility
- Is there enough incentive to explore the proposed asymmetric spacer process using lithography at 0.25-mm scale?
- New process must be invented to realize the potential benefits at 100-nm.
Threshold controllability
- Although no boron pileup is modeled in this work, the HMG structure would help reducing such undesirable RSCE since an additional S-gate is added.
Gate material engineering
- In principle, if a “spacer” could be formed at the source side, the same could be done at the drain side (called drain-gate or “D-gate”) with a lower workfunction (Wd) to control the channel resistance at the drain side.
Asymmetric MOSFET
- What is the implication of the asymmetric MOS structure on circuit design?
- Will the asymmetric MOSFET be the ultimate solution for breaking the barrier of conventional MOS scaling limit?