The Ultimate Performance Comparison: Will HMGFET Beat SMGFET for the Same Technology Node? And Beyond ...?
- Conclusion
HMGFET could beat SMGFET in terms of on- and off-state currents if a “simple,” compatible asymmetric spacer process could be realized.
Observations
- HMGFET exhibits a unique log(Ioff) vs. Ion behavior with an extended “flat” region (due to extended Vt roll-off).
- At the designed technology node Lg = 0.25 mm, the HMGFET can achieve comparable Ion and Ioff to those of the SMGFET, even with the added W-spacer.
- Technology could be further scaled (down to 0.12 mm) with HMGFET, at which the SMGFET counterpart will no longer work.