Conclusions
Model features
- Separate, and physical, modeling of individual effects: Leff, meff, Rsd, VAeff, Iedge
- Separation of physical (“known”) and process (“unknown”) fitting parameters
- One-iteration, prioritized sequence of model parameter extraction at the “extreme” condition where its effect is most pronounced
- Minimum measurement data ? integration into automatic wafer test system
- Dynamic development ? extension to “any” new set of technology data
Applications
- Empirical correlation ? efficiently reduce wafer split-lot
- Statistical analysis ? process control and monitoring
- New technology development ? provide a quick and reliable prediction
- Circuit simulation ? early success in deep-submicron circuit design, with correlation to process variables
A new approach ? providing solutions to bridge the circuit designers with the technology developers